Magnetic anisotropy of Ni films prepared by ion beam sputtering.
نویسندگان
چکیده
منابع مشابه
Effect of Thickness on Structural and Morphological Properties of AlN Films Prepared Using Single Ion Beam Sputtering
Aluminum nitride (AlN) thin films have potential applications in microelectronic and optoelectronic devices. In this study, AlN thin films with different thicknesses were deposited on silicon substrate by single ion beam sputtering method. The X-ray diffraction (XRD) spectra revealed that the structure of films with thickness of - nm was amorphous, while the polycrystalline hexagonal AlN with a...
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Ni1 2 Mn Ga ( 0 2 and 0.25) alloys in thin film form were prepared by ion-beam sputtering from alloy targets. For Si(001) substrates the structure/texture of the films are a function of the growth temperature ( ). The tetragonal martensite structure with a (220) texture was obtained for an optimal 300–350 C. At higher temperatures a cubic silicide (Mn12Ni4Si3) was obtained. At room temperature,...
متن کاملMagneto-Optical Properties of Pr, Ni- and Ce, Ni-Substituted YIG Epitaxial Films Prepared by Sputtering
Films of Y,R,(Fe, Ni),O,, @=PI, Ce) have been epitaxially grown in situ on G&G%O,, ( 1 1 1 ) substrates by rf sputtering. Faraday rotation of Ce, Ni:YIG film decreased with valence change of Ce ions from 3+ to 4+ induced by Ni substitution. On the other hand, PI, Ni:YIG films showed negative Faraday rotation in the visible which slightly increases in negative sign for Ni substitution. Magneto-o...
متن کاملPoint defects in Sc2O3 thin films by ion beam sputtering.
We show that the concentration of oxygen interstitials trapped in Sc2O3 films by ion beam sputtering from metal targets can be controlled by modifying deposition conditions. We have identified point defects in the form of oxygen interstitials that are present in Sc2O3 films, in significantly high concentrations, i.e., ∼10(18) cm(-3). These results show a correlation between the increase of oxy...
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ژورنال
عنوان ژورنال: Journal of the Magnetics Society of Japan
سال: 1989
ISSN: 0285-0192
DOI: 10.3379/jmsjmag.13.273